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Fujitsu MB8116E

In Stock: 16
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£5.00

Product Info

16kBit Dynamic RAM


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MOS 16,384-Bit Dynamic Random Access Memory

  • 16,384 × 1 RAM, 16 Pin Package
  • Silicon Gate, Double-Poly NMOS, Single Transistor Cell.
  • Row Access Time:
    • 200 ns Max (MB8116E)
    • 150 ns Max (MB8116H)
  • Cycle Time: 375 ns Min
  • Low Power:
    • Active: 462 mW
    • Standby: 20 mW
  • ± 10% Tolerance on + 12 V, ± 5 V Supplies
  • All Inputs TTL Compatible, Low Capacitive Load.
  • Tri-State TTL Compatible Output
  • "Gated" CAS
  • 128 Refresh Cycles
  • Common I/O Capability using "Early Write" Operation
  • Output Unlatched at Cycle End Allows Extended Page Boundary and Two-Dimensional Chip Select
  • Read-Modify-Write, RAS-Only Refresh and Page Mode Capability
  • On-Chip Latches for Address and Data-In
  • Compatible with MK4116

(Data taken from Fujitsu Microelectronics MB8116E/MB8116H Datasheet)

Listed is the "E" Variety: 200 ns Row Access Time.

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